IPD048N06L3GBTMA1 N-Channel MOSFET, 90 A, 60 V OptiMOS 3, 3-Pin DPAK Infineon [IPD048N06L3GBTMA1]; 178-5196
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 90 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 8.2 mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation | 115 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Length | 6.73mm |
| Forward Diode Voltage | 1.2V |
| Transistor Material | Si |
| Width | 7.36mm |
| Typical Gate Charge @ Vgs | 37 nC @ 4.5 V |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | +175 °C |
| Height | 2.41mm |