IPD200N15N3GATMA1 N-Channel MOSFET, 50 A, 150 V IPD200N15N3 G, 3 + 2 Tab-Pin DPAK Infineon [IPD200N15N3GATMA1]; 170-2287
Original price
0₫
-
Original price
0₫
Original price
0₫
0₫
-
0₫
Current price
0₫
| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 50 A |
| Maximum Drain Source Voltage | 150 V |
| Package Type | TO-252 |
| Mounting Type | Surface Mount |
| Pin Count | 3 + 2 Tab |
| Maximum Drain Source Resistance | 20 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 150 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 20 V |
| Number of Elements per Chip | 1 |
| Width | 9.45mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.2V |
| Maximum Operating Temperature | +175 °C |
| Series | IPD200N15N3 G |
| Height | 4.57mm |
| Typical Gate Charge @ Vgs | 23 nC @ 10 V |
| Length | 10.36mm |