IPD220N06L3GBTMA1 N-Channel MOSFET, 30 A, 60 V OptiMOS 3, 3-Pin DPAK Infineon [IPD220N06L3GBTMA1]; 110-7435
Original price
0₫
-
Original price
0₫
Original price
0₫
0₫
-
0₫
Current price
0₫
| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 30 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 39.8 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.2V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 36 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Forward Diode Voltage | 1.2V |
| Width | 6.22mm |
| Height | 2.41mm |
| Maximum Operating Temperature | +175 °C |
| Series | OptiMOS 3 |
| Length | 6.73mm |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 7 nC @ 4.5 V |