IPD30N03S4L09ATMA1 N-Channel MOSFET, 30 A, 30 V OptiMOS T2, 3-Pin DPAK Infineon [IPD30N03S4L09ATMA1]; 165-5956
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 30 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 13.5 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.2V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 42 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -16 V, +16 V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Length | 6.5mm |
| Minimum Operating Temperature | -55 °C |
| Width | 6.22mm |
| Maximum Operating Temperature | +175 °C |
| Series | OptiMOS T2 |
| Height | 2.3mm |
| Typical Gate Charge @ Vgs | 15 nC @ 10 V |