IPD320N20N3GATMA1 N-Channel MOSFET, 34 A, 200 V IPD320N20N3 G, 3 + 2 Tab-Pin DPAK Infineon [IPD320N20N3GATMA1]; 170-2294
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 34 A |
| Maximum Drain Source Voltage | 200 V |
| Package Type | TO-252 |
| Mounting Type | Surface Mount |
| Pin Count | 3 + 2 Tab |
| Maximum Drain Source Resistance | 32 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 136 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 20 V |
| Number of Elements per Chip | 1 |
| Forward Diode Voltage | 1.2V |
| Width | 7.47mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +175 °C |
| Series | IPD320N20N3 G |
| Height | 2.41mm |
| Typical Gate Charge @ Vgs | 22 nC @ 10 V |
| Length | 6.73mm |