IPD60R1K0CEAUMA1 N-Channel MOSFET, 6.8 A, 650 V CoolMOS CE, 3-Pin DPAK Infineon [IPD60R1K0CEAUMA1]; 168-5910
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 6.8 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 1 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 61 W |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Length | 6.73mm |
| Typical Gate Charge @ Vgs | 13 nC @ 10 V |
| Forward Diode Voltage | 0.9V |
| Maximum Operating Temperature | +150 °C |
| Series | CoolMOS CE |
| Minimum Operating Temperature | -40 °C |
| Width | 6.22mm |
| Height | 2.41mm |