IPD60R950C6ATMA1 N-Channel MOSFET, 4.4 A, 650 V CoolMOS C6, 3-Pin DPAK Infineon [IPD60R950C6ATMA1]; 165-7523
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 4.4 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 950 mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation | 37 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Series | CoolMOS C6 |
| Transistor Material | Si |
| Height | 2.41mm |
| Width | 6.22mm |
| Length | 6.73mm |
| Typical Gate Charge @ Vgs | 13 nC @ 10 V |