IPI45N06S4L08AKSA1 N-Channel MOSFET, 45 A, 60 V OptiMOS T2, 3-Pin I2PAK Infineon [IPI45N06S4L08AKSA1]; 165-5168
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 45 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | I2PAK (TO-262) |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 14 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 71 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -16 V, +16 V |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Transistor Material | Si |
| Height | 9.25mm |
| Length | 10mm |
| Maximum Operating Temperature | +175 °C |
| Series | OptiMOS T2 |
| Typical Gate Charge @ Vgs | 49 nC @ 10 V |
| Width | 4.4mm |