IPI65R280E6XKSA1 N-Channel MOSFET, 13.8 A, 700 V CoolMOS E6, 3-Pin I2PAK Infineon [IPI65R280E6XKSA1]; 165-5173
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 13.8 A |
| Maximum Drain Source Voltage | 700 V |
| Package Type | I2PAK (TO-262) |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 280 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 104 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Width | 4.52mm |
| Height | 9.45mm |
| Typical Gate Charge @ Vgs | 45 nC @ 10 V |
| Series | CoolMOS E6 |
| Transistor Material | Si |
| Length | 10.36mm |
| Maximum Operating Temperature | +150 °C |