IPN50R650CEATMA1 N-Channel MOSFET, 9 A, 550 V CoolMOS CE, 3+Tab-Pin SOT-223 Infineon [IPN50R650CEATMA1]; 130-0914
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.375 |
| Maximum Drain Source Voltage | 550 V |
| Package Type | SOT-223 |
| Mounting Type | Surface Mount |
| Pin Count | 3 + Tab |
| Maximum Drain Source Resistance | 650 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 5 W |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Forward Diode Voltage | 0.84V |
| Minimum Operating Temperature | -40 °C |
| Series | CoolMOS CE |
| Width | 3.7mm |
| Height | 1.7mm |
| Typical Gate Charge @ Vgs | 15 nC @ 10 V |
| Length | 6.7mm |
| Maximum Operating Temperature | +150 °C |