IPP120P04P4L03AKSA1 P-Channel MOSFET, 120 A, 40 V OptiMOS P, 3-Pin TO-220 Infineon [IPP120P04P4L03AKSA1]; 857-6883
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 120 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 5.2 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.2V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 136 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -16 V, +16 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 180 nC @ 10 V |
| Transistor Material | Si |
| Length | 10mm |
| Width | 4.4mm |
| Minimum Operating Temperature | -55 °C |
| Height | 15.65mm |
| Series | OptiMOS P |
| Maximum Operating Temperature | +175 °C |