IPP60R099P6XKSA1 N-Channel MOSFET, 37.9 A, 650 V CoolMOS P6, 3+Tab-Pin TO-220 Infineon [IPP60R099P6XKSA1]; 168-5936
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 37.9 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 + Tab |
| Maximum Drain Source Resistance | 99 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.5V |
| Minimum Gate Threshold Voltage | 3.5V |
| Maximum Power Dissipation | 278 W |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 70 nC @ 10 V |
| Height | 15.95mm |
| Series | CoolMOS P6 |
| Maximum Operating Temperature | +150 °C |
| Length | 10.36mm |
| Forward Diode Voltage | 0.9V |
| Minimum Operating Temperature | -55 °C |
| Width | 4.57mm |