IPP60R520E6XKSA1 N-Channel MOSFET, 8.1 A, 600 V CoolMOS E6, 3-Pin TO-220 Infineon [IPP60R520E6XKSA1]; 165-5225
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 8.1 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 520 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 66 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 23.4 nC @ 10 V |
| Height | 15.95mm |
| Length | 10.36mm |
| Transistor Material | Si |
| Width | 4.57mm |
| Minimum Operating Temperature | -55 °C |
| Series | CoolMOS E6 |
| Maximum Operating Temperature | +150 °C |