IPP80P03P4L04AKSA1 P-Channel MOSFET, 80 A, 30 V OptiMOS P, 3-Pin TO-220 Infineon [IPP80P03P4L04AKSA1]; 124-9058
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 80 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 7 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation | 137 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -16 V, +5 V |
| Number of Elements per Chip | 1 |
| Width | 4.4mm |
| Minimum Operating Temperature | -55 °C |
| Transistor Material | Si |
| Series | OptiMOS P |
| Maximum Operating Temperature | +175 °C |
| Typical Gate Charge @ Vgs | 125 nC @ 10 V |
| Length | 10mm |
| Height | 15.65mm |