IPS65R1K4C6AKMA1 N-Channel MOSFET, 3.2 A, 700 V CoolMOS C6, 3-Pin IPAK Infineon [IPS65R1K4C6AKMA1]; 168-8116
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 3.2 A |
| Maximum Drain Source Voltage | 700 V |
| Package Type | IPAK (TO-251) |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 1.4 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 28 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Series | CoolMOS C6 |
| Minimum Operating Temperature | -55 °C |
| Height | 6.22mm |
| Width | 2.39mm |
| Typical Gate Charge @ Vgs | 10.5 nC @ 10 V |
| Transistor Material | Si |
| Length | 6.73mm |
| Maximum Operating Temperature | +150 °C |