IPT012N08N5ATMA1 N-Channel MOSFET, 300 A, 80 V IPT012N08N5, 8 + Tab-Pin HSOF Infineon [IPT012N08N5ATMA1]; 170-2318
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 300 A |
| Maximum Drain Source Voltage | 80 V |
| Package Type | HSOF |
| Mounting Type | Surface Mount |
| Pin Count | 8 + Tab |
| Maximum Drain Source Resistance | 1.7 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.8V |
| Minimum Gate Threshold Voltage | 2.2V |
| Maximum Power Dissipation | 375 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 20 V |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.2V |
| Height | 2.4mm |
| Series | IPT012N08N5 |
| Length | 10.1mm |
| Maximum Operating Temperature | +175 °C |
| Typical Gate Charge @ Vgs | 178 nC @ 10 V |
| Width | 10.58mm |