IPT020N10N3ATMA1 N-Channel MOSFET, 300 A, 100 V OptiMOS 3, 8-Pin HSOF Infineon [IPT020N10N3ATMA1]; 178-7450
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 300 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | HSOF |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 3.7 mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation | 375 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Length | 10.58mm |
| Forward Diode Voltage | 1V |
| Minimum Operating Temperature | -55 °C |
| Width | 10.1mm |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 156 nC @ 10 V |
| Height | 2.4mm |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | +175 °C |