IRF1010EZSTRLP N-Channel MOSFET, 84 A, 60 V IRF1010EZS, 2 + Tab-Pin D2PAK Infineon [IRF1010EZSTRLP]; 162-3279
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 84 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | D2PAK |
| Mounting Type | Surface Mount |
| Pin Count | 2 + Tab |
| Maximum Drain Source Resistance | 8.5 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 140 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Forward Diode Voltage | 1.3V |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +175 °C |
| Length | 10.67mm |
| Width | 9.65mm |
| Height | 4.83mm |
| Typical Gate Charge @ Vgs | 58 nC @ 10 V |
| Series | IRF1010EZS |