IRF3717TRPBF N-Channel MOSFET, 20 A, 20 V HEXFET, 8-Pin SOIC Infineon [IRF3717TRPBF]; 130-0941
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 20 A |
| Maximum Drain Source Voltage | 20 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 5.7 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.45V |
| Minimum Gate Threshold Voltage | 1.55V |
| Maximum Power Dissipation | 2.5 W |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Width | 4mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1V |
| Length | 5mm |
| Height | 1.5mm |
| Typical Gate Charge @ Vgs | 22 nC @ 4.5 V |
| Series | HEXFET |
| Maximum Operating Temperature | +150 °C |