IRF630NPBF N-Channel MOSFET, 9.3 A, 200 V HEXFET, 3-Pin TO-220AB Infineon [IRF630NPBF]; 543-0068
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 9.3 A |
| Maximum Drain Source Voltage | 200 V |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 300 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 82 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Height | 8.77mm |
| Series | HEXFET |
| Maximum Operating Temperature | +175 °C |
| Length | 10.54mm |
| Width | 4.69mm |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 35 nC @ 10 V |
| Minimum Operating Temperature | -55 °C |