IRF7317TRPBF Dual N/P-Channel MOSFET, 5.3 A, 6.6 A, 20 V HEXFET, 8-Pin SOIC Infineon [IRF7317TRPBF]; 168-7930
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N, P |
| Maximum Continuous Drain Current | 5.3 A, 6.6 A |
| Maximum Drain Source Voltage | 20 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 46 mΩ, 98 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 0.7V |
| Minimum Gate Threshold Voltage | 0.7V |
| Maximum Power Dissipation | 2 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Number of Elements per Chip | 2 |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 18 nC @ 4.5 V, 19 nC @ 4.5 V |
| Height | 1.5mm |
| Minimum Operating Temperature | -55 °C |
| Series | HEXFET |
| Width | 4mm |
| Maximum Operating Temperature | +150 °C |
| Length | 5mm |