IRF7820TRPBF N-Channel MOSFET, 3.7 A, 200 V HEXFET, 8-Pin SOIC Infineon [IRF7820TRPBF]; 130-0959
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 3.7 A |
| Maximum Drain Source Voltage | 200 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 78 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 2.5 W |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Width | 4mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.3V |
| Maximum Operating Temperature | +150 °C |
| Series | HEXFET |
| Height | 1.5mm |
| Typical Gate Charge @ Vgs | 29 nC @ 10 V |
| Length | 5mm |