IRF7855PBF N-Channel MOSFET, 12 A, 60 V HEXFET, 8-Pin SOIC Infineon [IRF7855PBF]; 688-6881
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0 |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 9 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.9V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 2.5 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 26 nC @ 10 V |
| Width | 4mm |
| Minimum Operating Temperature | -55 °C |
| Height | 1.5mm |
| Series | HEXFET |
| Maximum Operating Temperature | +150 °C |
| Length | 5mm |