IRF7910TRPBF Dual N-Channel MOSFET, 10 A, 12 V HEXFET, 8-Pin SOIC Infineon [IRF7910TRPBF]; 165-8053
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.416666666666667 |
| Maximum Drain Source Voltage | 12 V |
| Package Type | SOIC |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 50 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 0.6V |
| Maximum Power Dissipation | 2 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Number of Elements per Chip | 2 |
| Forward Diode Voltage | 1.3V |
| Transistor Material | Si |
| Width | 4mm |
| Typical Gate Charge @ Vgs | 17 nC @ 4.5 V |
| Minimum Operating Temperature | -55 °C |
| Length | 5mm |
| Maximum Operating Temperature | +150 °C |
| Series | HEXFET |
| Height | 1.5mm |