IRFB812PBF N-Channel MOSFET, 3.6 A, 500 V HEXFET, 3-Pin TO-220AB Infineon [IRFB812PBF]; 145-9214
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 3.6 A |
| Maximum Drain Source Voltage | 500 V |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 2.2 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 78 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Length | 10.67mm |
| Maximum Operating Temperature | +150 °C |
| Series | HEXFET |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 20 nC @ 10 V |
| Height | 16.51mm |
| Minimum Operating Temperature | -55 °C |
| Width | 4.83mm |