IRFH8316TRPBF N-Channel MOSFET, 120 A, 30 V HEXFET, 8-Pin PQFN Infineon [IRFH8316TRPBF]; 165-8285
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 120 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | PQFN |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 4.3 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.2V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 59 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Series | HEXFET |
| Forward Diode Voltage | 1V |
| Transistor Material | Si |
| Length | 6mm |
| Width | 5mm |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 30 nC @ 4.5 V |
| Height | 1mm |