IRFI4212H-117P Dual N-Channel MOSFET, 11 A, 100 V HEXFET, 5-Pin TO-220 Infineon [IRFI4212H-117P]; 700-3220
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0.458333333333333 |
| Maximum Drain Source Voltage | 100 V |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 5 |
| Maximum Drain Source Resistance | 73 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 18 W |
| Transistor Configuration | Series |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Width | 4.83mm |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 12 nC @ 10 V |
| Height | 9.02mm |
| Series | HEXFET |
| Maximum Operating Temperature | +150 °C |
| Length | 10.67mm |