IRFP7718PBF N-Channel MOSFET, 355 A, 75 V HEXFET, 3-Pin TO-247 Infineon [IRFP7718PBF]; 879-3325
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 355 A |
| Maximum Drain Source Voltage | 75 V |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 1.8 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.7V |
| Minimum Gate Threshold Voltage | 2.1V |
| Maximum Power Dissipation | 517 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Width | 5.31mm |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 552 nC @ 10 V |
| Forward Diode Voltage | 1.3V |
| Height | 20.7mm |
| Series | HEXFET |
| Maximum Operating Temperature | +175 °C |
| Length | 15.87mm |
| Transistor Material | Si |