IRFR9N20DTRPBF N-Channel MOSFET, 9.4 A, 200 V HEXFET, 3-Pin DPAK Infineon [IRFR9N20DTRPBF]; 165-8218
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 9.4 A |
| Maximum Drain Source Voltage | 200 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 380 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5.5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 86 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 18 nC @ 10 V |
| Height | 2.39mm |
| Series | HEXFET |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Length | 6.73mm |
| Forward Diode Voltage | 1.3V |
| Transistor Material | Si |
| Width | 7.49mm |