IRFS3306PBF N-Channel MOSFET, 160 A, 60 V HEXFET, 3-Pin DPAK Infineon [IRFS3306PBF]; 145-8610
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 160 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 4 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 230 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Width | 9.65mm |
| Minimum Operating Temperature | -55 °C |
| Transistor Material | Si |
| Length | 4.06mm |
| Maximum Operating Temperature | +175 °C |
| Series | HEXFET |
| Height | 14.61mm |
| Typical Gate Charge @ Vgs | 85 nC @ 10 V |