IRFS4229PBF N-Channel MOSFET, 45 A, 250 V HEXFET, 3-Pin D2PAK Infineon [IRFS4229PBF]; 495-883
Original price
0₫
-
Original price
0₫
Original price
0₫
0₫
-
0₫
Current price
0₫
| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 45 A |
| Maximum Drain Source Voltage | 250 V |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 48 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 330 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 72 nC @ 10 V |
| Minimum Operating Temperature | -40 °C |
| Width | 9.65mm |
| Length | 10.67mm |
| Transistor Material | Si |
| Series | HEXFET |
| Maximum Operating Temperature | +175 °C |
| Height | 4.83mm |