IRFTS9342TRPBF P-Channel MOSFET, 5.8 A, 30 V HEXFET, 6-Pin TSOP Infineon [IRFTS9342TRPBF]; 165-8190
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 5.8 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | TSOP |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 66 mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation | 2 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Width | 1.75mm |
| Transistor Material | Si |
| Forward Diode Voltage | 1.2V |
| Length | 3mm |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 12 nC @ 10 V |
| Height | 1.3mm |
| Series | HEXFET |