IRFU13N20DPBF N-Channel MOSFET, 13 A, 200 V HEXFET, 3-Pin IPAK Infineon [IRFU13N20DPBF]; 865-5847
Original price
0₫
-
Original price
0₫
Original price
0₫
0₫
-
0₫
Current price
0₫
| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 13 A |
| Maximum Drain Source Voltage | 200 V |
| Package Type | IPAK (TO-251) |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 235 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5.5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 110 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Series | HEXFET |
| Typical Gate Charge @ Vgs | 25 nC @ 10 V |
| Length | 6.73mm |
| Maximum Operating Temperature | +175 °C |
| Transistor Material | Si |
| Height | 2.39mm |
| Width | 9.78mm |