IRFU3410PBF N-Channel MOSFET, 31 A, 100 V HEXFET, 3-Pin IPAK Infineon [IRFU3410PBF]; 145-9346
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 31 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | IPAK (TO-251) |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 39 mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation | 110 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Width | 2.39mm |
| Minimum Operating Temperature | -55 °C |
| Transistor Material | Si |
| Series | HEXFET |
| Maximum Operating Temperature | +175 °C |
| Length | 6.73mm |
| Height | 6.22mm |
| Typical Gate Charge @ Vgs | 37 nC @ 10 V |
| Forward Diode Voltage | 1.3V |