IRLML6302TRPBF P-Channel MOSFET, 780 mA, 20 V HEXFET, 3-Pin SOT-23 Infineon [IRLML6302TRPBF]; 610-6851
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 780 mA |
| Maximum Drain Source Voltage | 20 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 600 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1.5V |
| Minimum Gate Threshold Voltage | 0.7V |
| Maximum Power Dissipation | 540 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Width | 1.4mm |
| Length | 3.05mm |
| Maximum Operating Temperature | +150 °C |
| Series | HEXFET |
| Height | 1.01mm |
| Typical Gate Charge @ Vgs | 2.4 nC @ 4.5 V |
| Minimum Operating Temperature | -55 °C |