IRLMS1902TRPBF N-Channel MOSFET, 3.2 A, 20 V HEXFET, 6-Pin Micro6 Infineon [IRLMS1902TRPBF]; 165-5817
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 3.2 A |
| Maximum Drain Source Voltage | 20 V |
| Package Type | Micro6 |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 170 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 0.7V |
| Minimum Gate Threshold Voltage | 0.7V |
| Maximum Power Dissipation | 1.7 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Number of Elements per Chip | 1 |
| Length | 3mm |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 4.7 nC @ 4.5 V |
| Height | 1.3mm |
| Series | HEXFET |
| Maximum Operating Temperature | +150 °C |
| Width | 1.75mm |
| Minimum Operating Temperature | -55 °C |