SPB18P06PGATMA1 P-Channel MOSFET, 18.6 A, 60 V SIPMOS, 3-Pin D2PAK Infineon [SPB18P06PGATMA1]; 165-6651
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 18.6 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 130 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2.1V |
| Maximum Power Dissipation | 81.1 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Width | 4.4mm |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 21 nC @ 10 V |
| Height | 9.25mm |
| Series | SIPMOS |
| Maximum Operating Temperature | +175 °C |
| Length | 10mm |