IXFA22N65X2 N-Channel MOSFET, 22 A, 650 V HiperFET, X2-Class, 3-Pin D2PAK IXYS [IXFA22N65X2]; 168-4819
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 22 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 145 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 2.7V |
| Maximum Power Dissipation | 390 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.4V |
| Width | 11.05mm |
| Height | 4.83mm |
| Series | HiperFET, X2-Class |
| Length | 10.41mm |
| Typical Gate Charge @ Vgs | 37 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |