IXFB110N60P3 N-Channel MOSFET, 110 A, 600 V HiperFET, Polar3, 3-Pin PLUS264 IXYS [IXFB110N60P3]; 802-4344
Original price
0₫
-
Original price
0₫
Original price
0₫
0₫
-
0₫
Current price
0₫
| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 110 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | PLUS264 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 56 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 1.89 kW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Width | 5.31mm |
| Height | 26.59mm |
| Maximum Operating Temperature | +150 °C |
| Length | 20.29mm |
| Transistor Material | Si |
| Series | HiperFET, Polar3 |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 245 nC @ 10 V |