IXFB82N60Q3 N-Channel MOSFET, 82 A, 600 V HiperFET, Q3-Class, 3-Pin PLUS264 IXYS [IXFB82N60Q3]; 801-1370
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 82 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | PLUS264 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 75 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 6.5V |
| Maximum Power Dissipation | 1.56 kW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 275 nC @ 10 V |
| Height | 26.59mm |
| Series | HiperFET, Q3-Class |
| Transistor Material | Si |
| Length | 20.29mm |
| Width | 5.31mm |
| Minimum Operating Temperature | -55 °C |