IXFH110N10P N-Channel MOSFET, 110 A, 100 V HiperFET, Polar, 3-Pin TO-247 IXYS [IXFH110N10P]; 168-4469
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 110 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 15 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 480 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Series | HiperFET, Polar |
| Width | 5.3mm |
| Height | 21.46mm |
| Minimum Operating Temperature | -55 °C |
| Typical Gate Charge @ Vgs | 110 nC @ 10 V |
| Maximum Operating Temperature | +175 °C |
| Length | 16.26mm |
| Transistor Material | Si |