IXFK100N65X2 N-Channel MOSFET, 100 A, 650 V HiperFET, X2-Class, 3-Pin TO-264P IXYS [IXFK100N65X2]; 917-1429
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | TO-264P |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 30 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 2.7V |
| Maximum Power Dissipation | 1.04 kW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Width | 26.3mm |
| Height | 5.3mm |
| Series | HiperFET, X2-Class |
| Minimum Operating Temperature | -55 °C |
| Length | 20.3mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 183 nC @ 10 V |
| Forward Diode Voltage | 1.4V |