IXFK27N80Q N-Channel MOSFET, 27 A, 800 V HiperFET, Q-Class, 3-Pin TO-264AA IXYS [IXFK27N80Q]; 711-5382
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 27 A |
| Maximum Drain Source Voltage | 800 V |
| Package Type | TO-264AA |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 320 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Power Dissipation | 500 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Width | 5.13mm |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 170 nC @ 10 V |
| Height | 26.16mm |
| Minimum Operating Temperature | -55 °C |
| Length | 19.96mm |
| Series | HiperFET, Q-Class |