IXFN100N50Q3 N-Channel MOSFET, 82 A, 500 V HiperFET, Q3-Class, 4-Pin SOT-227B IXYS [IXFN100N50Q3]; 168-4752
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 82 A |
| Maximum Drain Source Voltage | 500 V |
| Package Type | SOT-227B |
| Mounting Type | Panel Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 49 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 6.5V |
| Maximum Power Dissipation | 960 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Height | 9.6mm |
| Width | 25.07mm |
| Series | HiperFET, Q3-Class |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Length | 38.23mm |
| Typical Gate Charge @ Vgs | 255 nC @ 10 V |