IXFN110N85X N-Channel MOSFET, 110 A, 850 V HiperFET, 4-Pin SOT227 IXYS [IXFN110N85X]; 146-4396
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 110 A |
| Maximum Drain Source Voltage | 850 V |
| Package Type | SOT227 |
| Mounting Type | Surface Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 33 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5.5V |
| Minimum Gate Threshold Voltage | 3.5V |
| Maximum Power Dissipation | 1.17 kW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Number of Elements per Chip | 1 |
| Forward Diode Voltage | 1.4V |
| Minimum Operating Temperature | -55 °C |
| Width | 25.07mm |
| Length | 38.23mm |
| Maximum Operating Temperature | +150 °C |
| Series | HiperFET |
| Height | 9.6mm |
| Typical Gate Charge @ Vgs | 425 @ 10 V nC |