IXFN32N100Q3 N-Channel MOSFET, 28 A, 1000 V HiperFET, Q3-Class, 4-Pin SOT-227B IXYS [IXFN32N100Q3]; 168-4754
Original price
0₫
-
Original price
0₫
Original price
0₫
0₫
-
0₫
Current price
0₫
| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 28 A |
| Maximum Drain Source Voltage | 1000 V |
| Package Type | SOT-227B |
| Mounting Type | Panel Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 320 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 6.5V |
| Maximum Power Dissipation | 780 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 195 nC @ 10 V |
| Length | 38.23mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Series | HiperFET, Q3-Class |
| Height | 9.6mm |
| Width | 25.07mm |