IXFN360N15T2 N-Channel MOSFET, 310 A, 150 V GigaMOS TrenchT2 HiperFET, 4-Pin SOT-227 IXYS [IXFN360N15T2]; 168-4578
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 310 A |
| Maximum Drain Source Voltage | 150 V |
| Package Type | SOT-227 |
| Mounting Type | Surface Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 4 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 1.07 kW |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Forward Diode Voltage | 1.2V |
| Series | GigaMOS TrenchT2 HiperFET |
| Maximum Operating Temperature | +175 °C |
| Width | 25.07mm |
| Length | 38.23mm |
| Height | 9.6mm |
| Typical Gate Charge @ Vgs | 715 nC @ 10 V |
| Minimum Operating Temperature | -55 °C |