IXFN80N50P N-Channel MOSFET, 66 A, 500 V HiperFET, Polar, 4-Pin SOT-227B IXYS [IXFN80N50P]; 194-029
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 66 A |
| Maximum Drain Source Voltage | 500 V |
| Package Type | SOT-227B |
| Mounting Type | Panel Mount |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 65 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 700 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Height | 9.6mm |
| Series | HiperFET, Polar |
| Maximum Operating Temperature | +150 °C |
| Length | 38.2mm |
| Typical Gate Charge @ Vgs | 195 nC @ 10 V |
| Minimum Operating Temperature | -55 °C |
| Transistor Material | Si |
| Width | 25.07mm |