IXFP12N50P N-Channel MOSFET, 12 A, 500 V HiperFET, Polar, 3-Pin TO-220 IXYS [IXFP12N50P]; 168-4500
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 0 |
| Maximum Drain Source Voltage | 500 V |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 500 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5.5V |
| Maximum Power Dissipation | 200 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Height | 9.15mm |
| Width | 4.83mm |
| Minimum Operating Temperature | -55 °C |
| Series | HiperFET, Polar |
| Typical Gate Charge @ Vgs | 29 nC @ 10 V |
| Length | 10.66mm |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |