IXFT40N85XHV N-Channel MOSFET, 40 A, 850 V HiperFET, 3-Pin TO-268HV IXYS [IXFT40N85XHV]; 146-4367
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| THÔNG SỐ KỸ THUẬT | |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 40 A |
| Maximum Drain Source Voltage | 850 V |
| Package Type | TO-268HV |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 145 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5.5V |
| Minimum Gate Threshold Voltage | 3.5V |
| Maximum Power Dissipation | 860 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Number of Elements per Chip | 1 |
| Width | 15.15mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.4V |
| Length | 16.05mm |
| Maximum Operating Temperature | +150 °C |
| Series | HiperFET |
| Height | 5.1mm |
| Typical Gate Charge @ Vgs | 98 @ 10 V nC |